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| SPW35N60CFD CoolMOS Features TM Power Transistor Product Summary V DS R DS(on),max ID 600 V * New revolutionary high voltage technology * Intrinsic fast-recovery body diode * Extremely low reverse recovery charge * Ultra low gate charge * Extreme dv /dt rated * High peak current capability * Periodic avalanche rated * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant 0.118 34 A PG-TO247 Type SPW35N60CFD Package PG-TO247 Ordering Code Q67045A5053 Marking 35N60CFD Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) Drain source voltage slope Reverse diode dv /dt Maximum diode commutation speed Gate source voltage I D,pulse E AS E AR I AR dv /dt dv /dt di /dt V GS I D=34.1 A, V DS=480 V, T j=125 C I S=34.1 A, V DS=480 V, T j=125 C static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 C T C=25 C I D=10 A, V DD=50 V I D=20 A, V DD=50 V Value 34.1 21.6 85 1300 1 20 80 40 600 20 30 313 -55 ... 150 W C A V/ns V/ns A/s V mJ Unit A Rev. 1.2 page 1 2005-06-28 SPW35N60CFD Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 0.4 62 K/W Values typ. max. Unit Soldering temperature, wave solderingT sold - - 260 C Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 A V (BR)DS V GS(th) V GS=0 V, I D=34.1 A V DS=V GS, I D=1.9 mA V DS=600 V, V GS=0 V, T j=25 C V DS=600 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=21.6 A, T j=25 C V GS=10 V, I D=21.6 A, T j=150 C Gate resistance Transconductance RG g fs f =1 MHz, open drain |V DS|>2|I D|R DS(on)max, I D=21.6 A 600 3 700 4 5 V Zero gate voltage drain current I DSS - 4 - A - 3300 0.10 100 0.118 nA - 0.23 0.6 21 S Rev. 1.2 page 2 2005-06-28 SPW35N60CFD Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related4) Effective output capacitance, time related5) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage 1) 2) Values typ. max. Unit C iss C oss C rss C o(er) V GS=0 V, V DS=0 V to 480 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D=34.1 A, R G=3.3 V GS=0 V, V DS=25 V, f =1 MHz - 5060 1400 52 162 - pF - 299 20 25 65 12 ns Q gs Q gd Qg V plateau V DD=480 V, I D=34.1 A, V GS=0 to 10 V - 36 87 163 7.2 212 - nC V J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 3) 4) 5) Rev. 1.2 page 3 2005-06-28 SPW35N60CFD Parameter Symbol Conditions min. Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current IS I S,pulse V SD t rr Q rr I rrm V R=480 V, I F=I S, di F/dt =100 A/s T C=25 C V GS=0 V, I F=34.1 A, T j=25 C 1.0 180 1.5 16 34.1 85 1.2 V ns C A A Values typ. max. Unit Typical Transient Thermal Characteristics Symbol Value typ. R th1 R th2 R th3 R th4 R th5 0.00441 0.00608 0.0341 0.0602 0.0884 K/W C th1 C th2 C th3 C th4 C th5 C th6 Unit Symbol Value typ. 0.00037 0.00223 0.00315 0.0179 0.098 4.45) Ws/K Unit 5) C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if R thCA=0 K/W. Rev. 1.2 page 4 2005-06-28 SPW35N60CFD 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 400 102 limited by on-state resistance 1 s 10 s 100 s 300 101 DC 1 ms P tot [W] 200 I D [A] 10 ms 100 100 0 0 40 80 120 160 10-1 100 101 102 103 T C [C] V DS [V] 3 Max. transient thermal impedance I D=f(V DS); T j=25 C parameter: D=t p/T 100 4 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 90 20 V 10 V 0.5 75 10-1 8V 0.2 60 Z thJC [K/W] I D [A] 0.1 45 0.05 10-2 0.02 0.01 single pulse 7V 30 6.5 V 15 6V 5.5 V 10 -3 0 -6 5V 10 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0 5 10 15 20 t p [s] V DS [V] Rev. 1.2 page 5 2005-06-28 SPW35N60CFD 5 Typ. output characteristics I D=f(V DS); T j=150 C parameter: V GS 60 20 V 10 V 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 C parameter: V GS 0.5 50 8V 0.4 40 7V R DS(on) [] 0.3 5V 5.5 V 6V 6.5 V 7V I D [A] 30 6.5 V 0.2 20 V 20 6V 10 5.5 V 5V 0.1 0 0 5 10 15 20 0 0 10 20 30 40 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D=21.9 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.3 150 0.25 120 25 C 0.2 R DS(on) [] 90 0.15 98 % I D [A] 60 typ 150 C 0.1 0.05 30 0 -60 -20 20 60 100 140 180 0 0 2 4 6 8 10 T j [C] V GS [V] Rev. 1.2 page 6 2005-06-28 SPW35N60CFD 9 Typ. gate charge V GS=f(Q gate); I D=34.1 A pulsed parameter: V DD 12 120 V 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 25 C, 98% 150 C, 98% 10 25 C 480 V 150 C 8 101 V GS [V] 6 4 I F [A] 100 10-1 2 0 0 50 100 150 200 0 0.5 1 1.5 2 Q gate [nC] V SD [V] 11 Avalanche SOA I AR=f(t AR) parameter: T j(start) 25 12 Avalanche energy E AS=f(T j); I D=10 A; V DD=50 V 1400 1200 20 1000 15 E AS [mJ] 125 C 25 C I AV [A] 800 10 600 400 5 200 0 10-3 10-2 10-1 100 101 102 103 0 20 60 100 140 180 t AR [s] T j [C] Rev. 1.2 page 7 2005-06-28 SPW35N60CFD 13 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=10 mA 14 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 700 105 660 104 Ciss V BR(DSS) [V] C [pF] 620 103 Coss 580 102 Crss 540 -60 -20 20 60 100 140 180 101 0 100 200 300 400 500 T j [C] V DS [V] 15 Typ. C oss stored energy E oss= f(V DS) 16 Typ. reverse recovery charge Q rr=f(T j); I S=34.1 A; di /dt =100 A/s 30 3 2.8 25 2.6 20 2.4 E oss [J] Q rr [C] 15 2.2 2 10 1.8 5 1.6 0 0 100 200 300 400 500 600 1.4 25 50 75 100 125 150 V DS [V] T j [C] Rev. 1.2 page 8 2005-06-28 SPW35N60CFD 17 Typ. reverse recovery charge Q rr=f(I S); di/ dt =100 A/s parameter: T j 3 18 Typ. reverse recovery charge Q rr=f(di /dt ); I S=34.1 A parameter: T j 7 2.5 125 C 6 5 2 125 C Q rr [C] 1.5 25 C Q rr [C] 4 3 25 C 1 2 0.5 1 0 0 5 10 15 20 25 30 35 0 0 300 600 900 I S [A] di/ dt [A/s] Rev. 1.2 page 9 2005-06-28 SPW35N60CFD Definition of diode switching characteristics Rev. 1.2 page 10 2005-06-28 SPW35N60CFD PG-TO-247-3-1 Rev. 1.2 page 11 2005-06-28 SPW35N60CFD Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strae 53 D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 page 12 2005-06-28 |
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